Improvement of Mosfet Characteristics

MOSFET Characteristics at Cryogenic Temperature

Efficiency is a large concern in power electronics but size and weight must be taken into consideration as well. Power devices in need of thermal sinks for appropriate performance will affect both size and weight. MOSFET devices are the main components in the power electronics world because of their comparatively promising characteristics in power loss and switching performance. The objective o...

Improvement of MOSFET matching characterization with calibrated multiplexed test structure

Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing

Article history: Received 23 November 2009 Received in revised form 21 January 2010 Available online 1 March 2010 0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.045 * Corresponding author. E-mail address: [email protected] (Y.-K. Fang In this work, influences of oxygen effect on an Hf-based high-k gate dielectric were investigated. A post deposition anneali...

Study on RF Characteristics and Modeling of Scaled MOSFET

Process Development and Characteristics of Nano III-V MOSFET

The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high inte...